skim609gal12e4 ? by semikron rev. 3 ? 14.07.2011 1 skim ? 93 gal trench igbt modules skim609gal12e4 features ? igbt 4 trench gate technology ? solderless sinter technology ?v ce(sat) with positive temperature coefficient ? low inductance case ? isolated by al 2 o 3 dcb (direct copper bonded) ceramic substrate ? pressure contact technology for thermal contacts and electrical contacts ? high short circuit capability, self limiting to 6 x i c ? integrated temperature sensor typical applications* ? automotive inverter ? high reliability ac inverter wind ? high reliability ac inverter drives absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 175 c t s =25c 748 a t s =70c 608 a i cnom 600 a i crm i crm = 3xi cnom 1800 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t s =25c 139 a t s =70c 110 a i fnom 600 a i frm i frm = 3xi fnom 1800 a i fsm t p = 10 ms, sin 180, t j =25c 900 a t j -40 ... 175 c freewheeling diode i f t j = 175 c t s =25c 1397 a t s =70c 1107 a i fnom 1350 a i frm i frm = 3xi fnom 4050 a i fsm t p = 10 ms, sin 180, t j =25c 6480 a t j -40 ... 175 c module i t(rms) t terminal =80c 700 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 2500 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =600a v ge =15v chiplevel t j =25c 1.85 2.10 v t j =150c 2.25 2.45 v v ce0 t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v t j =25c 1.8 2.0 m ? t j =150c 2.6 2.8 m ? v ge(th) v ge =v ce , i c =24ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 35.20 nf c oes f=1mhz 2.32 nf c res f=1mhz 1.88 nf q g v ge = - 8 v...+ 15 v 3400 nc r gint t j =25c 1.3 ?
skim609gal12e4 2 rev. 3 ? 14.07.2011 ? by semikron t d(on) v cc = 600 v i c =600a v ge =15v r g on =4.1 ? r g off =4.1 ? di/dt on = 5000 a/s di/dt off =4400a/s t j =150c 150 ns t r t j =150c 121 ns e on t j =150c 136 mj t d(off) t j =150c 808 ns t f t j =150c 100 ns e off t j =150c 83 mj r th(j-s) per igbt 0.068 k/w inverse diode v f = v ec i f = 150 a v ge =0v chip t j =25c 2.1 2.5 v t j =150c 2.1 2.4 v v f0 t j =25c 1.1 1.3 1.5 v t j =150c 0.7 0.9 1.1 v r f t j =25c 4.3 5.6 6.4 m ? t j =150c 6.7 7.8 8.5 m ? i rrm i f = 150 a di/dt off =3300a/s v ge =-15v v cc = 600 v t j =150c 153 a q rr t j =150c 15 c e rr t j =150c 9mj r th(j-s) per diode 0.501 k/w freewheeling diode v f = v ec i f = 600 a v ge =0v chip t j =25c 1.7 1.9 v t j =150c 1.4 1.7 v v f0 t j =25c 1.1 1.3 1.5 v t j =150c 0.7 0.9 1.1 v r f t j =25c 0.5 0.6 0.7 m ? t j =150c 0.7 0.9 0.9 m ? i rrm i f = 600 a di/dt off =5300a/s v ge =-15v v cc = 600 v t j =150c 510 a q rr t j =150c 123 c e rr t j =150c 39 mj r th(j-s) per diode 0.048 k/w module l ce 10 15 nh r cc'+ee' terminal-chip t s =25c 0.3 m ? t s =125c 0.5 m ? w 1042 g temperatur sensor r 100 t sensor = 100 c (r 25 = 5 k ? )339 ? b 100/125 r (t) = r 100 exp[b 100/125 (1/t-1/373)]; t[k]; 4096 k characteristics symbol conditions min. typ. max. unit skim ? 93 gal trench igbt modules skim609gal12e4 features ? igbt 4 trench gate technology ? solderless sinter technology ?v ce(sat) with positive temperature coefficient ? low inductance case ? isolated by al 2 o 3 dcb (direct copper bonded) ceramic substrate ? pressure contact technology for thermal contacts and electrical contacts ? high short circuit capability, self limiting to 6 x i c ? integrated temperature sensor typical applications* ? automotive inverter ? high reliability ac inverter wind ? high reliability ac inverter drives
skim609gal12e4 ? by semikron rev. 3 ? 14.07.2011 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skim609gal12e4 4 rev. 3 ? 14.07.2011 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
skim609gal12e4 ? by semikron rev. 3 ? 14.07.2011 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. skim 93 gal
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